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Effects of contact-based non-uniformities in cadmium sulfide/cadmium telluride thin-film solar cells

dc.contributor.authorDavies, Alan R., author
dc.contributor.authorSites, James R., advisor
dc.date.accessioned2024-03-13T19:26:10Z
dc.date.available2024-03-13T19:26:10Z
dc.date.issued2008
dc.description.abstractTo strongly contribute to the near-term electricity supply, CdTe-based photovoltaic devices must continue to improve in performance under the constraint of simple and cost efficient fabrication methods. This dissertation focuses on characterization and modeling of devices with non-uniform performance induced by the cell contacts. Devices were obtained from a commercially viable pilot-scale fabrication system at Colorado State University. Current versus voltage (J-V), quantum efficiency (QE) and laser-beam-induced current (LBIC) were the main characterization techniques applied in this work. The p-type CdTe semiconductor has a large work-function and thus tends to form a Schottky barrier when the back-electrode is formed. A common strategy of mitigating the performance-limiting contact barrier is to prepare the CdTe surface with a chemical etch, and include Cu to reduce the effective barrier. Non-uniformity of the etch or Cu inclusion, or insufficient application of Cu can result in a non-uniform contact, with regions of high- and low-energy Schottky barriers participating in the cell performance. Barrier non-uniformities in devices with little or no Cu were identified with the LBIC measurement and a model for their influence was developed and tested using PSpice circuit modeling software. Because of their superstrate configuration, CdTe cells feature front contacts made from transparent-conducting oxides (TCOs). Fluorine-doped tin oxide (F:SnO2) is a common choice because of its availability and acceptable optical and electrical properties. When the n-CdS layer of the CdS/CdTe structure is thinned to encourage greater current generation, non-uniformities of the solar cell junction arise, as CdTe comes into sporadic contact with the TCO layer. Device simulations suggest that the SnO2/CdTe junction is weaker than CdS/CdTe because of a large conduction-band offset induced by the differing electron affinities in the heterojunction. LBIC was used to verify increasing non-uniformity in devices with thin CdS and whole-cell performance followed the trends predicted by simulations. An empirical relationship between CdS thickness and relative influence the weaker junction was developed. The practical limit of CdS thickness was determined to be about 120 nm for CSU devices.
dc.format.mediumborn digital
dc.format.mediumdoctoral dissertations
dc.identifierETDF_Davies_2008_3332763.pdf
dc.identifier.urihttps://hdl.handle.net/10217/237672
dc.languageEnglish
dc.language.isoeng
dc.publisherColorado State University. Libraries
dc.relation.ispartof2000-2019
dc.rightsCopyright and other restrictions may apply. User is responsible for compliance with all applicable laws. For information about copyright law, please see https://libguides.colostate.edu/copyright.
dc.rights.licensePer the terms of a contractual agreement, all use of this item is limited to the non-commercial use of Colorado State University and its authorized users.
dc.subjectcadmium sulfide
dc.subjectcadmium telluride
dc.subjectcontacts
dc.subjectnonuniform
dc.subjectsolar cells
dc.subjectcondensed matter physics
dc.titleEffects of contact-based non-uniformities in cadmium sulfide/cadmium telluride thin-film solar cells
dc.typeText
dcterms.rights.dplaThis Item is protected by copyright and/or related rights (https://rightsstatements.org/vocab/InC/1.0/). You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).
thesis.degree.disciplinePhysics
thesis.degree.grantorColorado State University
thesis.degree.levelDoctoral
thesis.degree.nameDoctor of Philosophy (Ph.D.)

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